| 摘要 |
PURPOSE: To manufacture a high-performance semiconductor device in which layers having different chemical compositions are homogeneously formed and joined with each other in excellent states by changing the course of substrates continuously passed through a plurality of chambers and the arrangement of the chambers in accordance with the alteration of the course. CONSTITUTION: A supply reel 12 and take-up reel 16 constitute a drive means and intermediate idler reels 20, 22, 24, and 26 constitute a guide means. When such a variable as the impurity, the other component of a reactive gas, the arranging order of chambers between a supply section 14 and take-up section 18 is changed, the arrangement of layers in the cross section of a semiconductor also changes accordingly. In such a continuous vapor-deposition method that an intrinsic layer (I-type layer) vapor-deposition chamber 30 is considerably longer than a P- or N-type layer vapor-deposition chamber 28 or 32, a film substrate 10 advances to the take-up reel 16 from the supply reel 12 at a substantially constant speed. Since an N-type layer, an intrinsic layer, and a P-type are continuously vapordeposited on various parts of the advancing film substrate 10, the thickness of the layer which is the function of the time spend in an arbitrary chamber decides the relative length of the chamber. |
