| 摘要 |
<p>An asymmetric Fabry-Perot modulator comprises a multiple quantum well (MQW) p-i-n diode (8,10,12) defined by a front surface of reflectivity 0.3 and a back surface of reflectivity 0.95. The cavity length L is such that resonance occurs close to the long wavelength side of the unbiased MQW absorption edge so that application of a bias signal to the MQW (12) causes the reflectivity of the cavity to become close to zero. This arrangement provides a high contrast modulator less sensitive to temperature variations and deviations from ideal reflectivities of the front and back surfaces than high-finesse Fabry-Perot modulators.</p> |
