发明名称 |
MOS memory cell with exponentially-profiled doping and offset floating gate tunnel oxidation. |
摘要 |
<p>A semiconductor memory device having a CMOS memory cell with a floating gate (18) and increasing concentration of dopant in the source (14), drain (12) and channel (25) regions. Typically the concentration profile is generally exponential. The device has relatively high diffusion current densities accelerated toward the surface and directed toward the channel/drain interface. Gate oxidation thickness is reduced over the channel (25) near the drain (12) to create a tunnel "window" (30) in the area of greatest electric field magnitude.</p> |
申请公布号 |
EP0384275(A2) |
申请公布日期 |
1990.08.29 |
申请号 |
EP19900102847 |
申请日期 |
1990.02.14 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ARONOWITZ, SHELDON;FORSYTHE, DONALD D.;WALKER, GEORGE P.;GADEPALLY, BAHSKAR V.S. |
分类号 |
H01L21/8247;H01L27/115;H01L29/10;H01L29/36;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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