| 摘要 |
<p>A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10<6.6-T>N</225> seconds or shorter wherein TN is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate. Also disclosed is a method for the production of the semiconductor device.</p> |
