发明名称 |
HIGH-PERFORMANCE TRENCH CAPACITORS FOR DRAM CELLS |
摘要 |
<p>A trench version of a high-capacitance (Hi-C) capacitor for a dynamic random-access-memory (DRAM) cell is made utilizing a modified version of the doping technique described in U.S. Pat. No. 4,471,524 and 4,472,212. A shallow highly doped trench region is thereby formed. At the same time, selected lateral surface portions of the structure are also thereby highly doped. These surface portions permit a direct electrical connection to be easily made between the capacitor and a subsequently formed adjacent access transistor.</p> |
申请公布号 |
EP0203960(B1) |
申请公布日期 |
1990.08.29 |
申请号 |
EP19850905991 |
申请日期 |
1985.11.11 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
LEBOWITZ, JOSEPH;LYNCH, WILLIAM, THOMAS |
分类号 |
H01L27/04;G11C11/34;G11C11/403;H01L21/225;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/94 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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