| 摘要 |
PURPOSE:To facilitate the adjustment of electrical characteristics, by containing a proper amount of Si and Al respectively in Ni-Cr alloy having a specific composition to enhance the stability degree of the value of resistivity of a thin film resistor using the obtained title target. CONSTITUTION:A main target for sputtering is obtained by containing 1.5-5.0wt Si and 2.5-8.0wt% Al in a Ni-Cr alloy of which the component ration of Ni and Cr is in a range of 3:2-2:3. In preparing a thin film resistor by using this target, even if presice management of a sputtering condition is not carried out, the thin film resistor having the stable value of resistivity and excellent in reproducibility of electrical characteristics can be obtained. |
