发明名称 |
Circuit arrangement for controlling the load current in a power MOSFET |
摘要 |
A circuit arrangement for controlling load current of a power MOSFET wherein the load is connected at the source terminal includes a second FET having a defined threshold voltage connected with its drain-source path inserted between the gate and source of the power MOSFET. A third FET connects the gate terminal of the second FET to the drain voltage of the power MOSFET when the power MOSFET is in the conductive condition. When the drain-source voltage of the power MOSFET becomes higher than the threshold voltage of the second FET, the second FET becomes conductive and drives the gate-source voltage of the power MOSFET down.
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申请公布号 |
US4952827(A) |
申请公布日期 |
1990.08.28 |
申请号 |
US19890438342 |
申请日期 |
1989.11.15 |
申请人 |
SIEMENS AG |
发明人 |
LEIPOLD, LUDWIG;SANDER, RAINALD;TIHANYI, JENOE;WEBER, ROLAND;NANCE: PAUL |
分类号 |
H03K17/08;H03K17/06;H03K17/082 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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