发明名称 Circuit arrangement for controlling the load current in a power MOSFET
摘要 A circuit arrangement for controlling load current of a power MOSFET wherein the load is connected at the source terminal includes a second FET having a defined threshold voltage connected with its drain-source path inserted between the gate and source of the power MOSFET. A third FET connects the gate terminal of the second FET to the drain voltage of the power MOSFET when the power MOSFET is in the conductive condition. When the drain-source voltage of the power MOSFET becomes higher than the threshold voltage of the second FET, the second FET becomes conductive and drives the gate-source voltage of the power MOSFET down.
申请公布号 US4952827(A) 申请公布日期 1990.08.28
申请号 US19890438342 申请日期 1989.11.15
申请人 SIEMENS AG 发明人 LEIPOLD, LUDWIG;SANDER, RAINALD;TIHANYI, JENOE;WEBER, ROLAND;NANCE: PAUL
分类号 H03K17/08;H03K17/06;H03K17/082 主分类号 H03K17/08
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