| 摘要 |
PURPOSE:To suppress the occurrence of inductive pulse voltage due to electrostatic induction, by setting the bias voltage of the input terminal of an up- switching element higher than the supply voltage of the output terminal of the corresponding up-transistor. CONSTITUTION:The gate bias voltage VGu of an up-switching element MOST. Qu is supplied from the voltage VB which is about 1.5 times as high as the voltage VS that is supplied to a power supply terminal 3. Thus the Qu is always on, and accordingly the potential of an output terminal 2 is never set to a floating state. Then the output pulse voltage Vo always keeps the value VS within a time region T1. As a result, the inductive pulse voltage caused by the electrostatic induction like (e) is suppressed although the pulse voltage of a high crest level is produced just near a circuit since the potential of the terminal 2 is not floating. |
