| 摘要 |
PURPOSE:To detect a defect of a p-type semiconductor in a noncontact manner and nondestructively without a need for treatments that the surface of the p-type semiconductor is oxidized, that an electrode is attached and the like by measuring electrons which are emitted by an interaction between an irradiation with a beam of light and a small number of carriers on the surface. CONSTITUTION:A secondary-electron multiplier 16 used to detect secondary electrons emitted when a specimen on a specimen table 11 is irradiated with a laser beam is installed at a side-wall part of a chamber 2; this multiplier 16 is connected to a differentiator 17. A pulse generator 13 is connected to the differentiator 17; a difference in a signal proportional to an amount of the secondary electrons in a dark state and a bright state is found in synchronization with a pulse from the generator 13 by using the differentiator 17; its result is input to a CRT 18. Thereby, it is possible to detect a defect of a p-type semiconductor in a noncontact manner and nondestructively without a need for treatments that the surface of the p-type semiconductor is oxidized, that an electrode is attached and the like. |
