| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pattern with a high aspect ratio by suppressing occurrence of a defect such as a fallen pattern in a lithography method, a heater used for the method, a semiconductor device using the pattern, and a manufacturing method thereof. SOLUTION: A pattern forming film is formed on one side of a substrate 10, and the pattern forming film is exposed by a prescribed pattern. Then the exposed pattern forming film 22 is developed and the substrate 10 on which the pattern forming film 22 is formed is heated so that the film thickness of the pattern forming film 22 is made thicker than that of the pattern forming film 22 after development. In this case, the substrate 10 is located so that the one side with the pattern formed thereon is directed downward for example between the development process and the heating process, and the substrate 10 is heated while the one side is directed downward. In this state, the pattern forming film is softened and deformed by the gravity. COPYRIGHT: (C)2005,JPO&NCIPI
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