SEMICONDUCTOR MEMORY

摘要

PURPOSE:To suppress an increase in cost when a constitution ratio of a RAM region to a ROM region is changed by a method wherein individual MOS memory cells of the RAM region and the ROM region are formed of MOS transistors whose number is identical and whose arrangement is identical and the individual region are formed by changing their wiring parts. CONSTITUTION:Individual MOS memory cells of a RAM region and a ROM region which are provided with sense amplifiers are formed in such a way that their number of elements is identical and that their element arrangement is identical; the regions are formed by changing wiring patterns between individual MOS transistors Q1 to Q6. Accordingly, a RAM cell and a ROM cell can be formed arbitrarily by changing only wiring masks. Thereby, it is possible to reduce an increase in cost when a constitution ratio of the RAM region to the ROM region is changed.