| 摘要 |
PURPOSE:To enable measurement of the effect of a trench stress on a P-N junction leak of a diffused layer of a trench lateral wall separately from the effect of an ion implantation damage on the occasion of formation of another diffused layer, by separating a P-N junction under an insulative thin film laid on an element region between trenches. CONSTITUTION:A device comprises a plurality of trenches 1 formed adjacently on an element region of a semiconductor substrate 10 and each having a diffused layer 2 constituting a P-N junction on the inner wall, an insulative thin film 3 formed on the inner walls of the trenches 1 and on the element region between the trenches 1, and a conductive thin film 4 formed on the insulative thin film 3, and the aforesaid P-N junction is separated under the insulative thin film 3 on the element region between the trenches 1. The P-type substrate 10 being grounded, for instance, a positive voltage is impressed on an N<+> diffused layer 7 through an Al wiring 8, the positive voltage is impressed on the plate electrode 4 of a trench capacitor, an N-channel is induced under the capacitor insulative film 3 on the surface, the N<+> diffused layer 7 under a contact and the N<+> diffused layers 2 of the lateral walls of the trenches in a plurality are connected electrically with each other, and thereby the effect of a trench stress on a P-N junction leak is measured. |
