| 摘要 |
PURPOSE:To make it possible to manufacture a resist pattern having a three- dimensional pattern structure, particularly, an overhang structure, in small number of steps by using a photomask wherein light transmitting parts, light shielding parts and semi-light-shielding parts and provided on a light transmitting substrate, performing initial exposure, and using one photomask. CONSTITUTION:A semiconductor substrate 2 is coated with resist 1. After prebaking, an initial exposure is performed in order to transfer the pattern of a photomask on the resist 1. After reversal baking, flood exposure is performed. Then, development is performed. In this image reversal step, a photomask, wherein parts which completely transmit light, parts 4 which completely shield the light and semi-light-shielding parts 5 which transmit only the light having the desired amount of light are provided on a light transmitting substrate 3 having a high light transmittance, is used to perform the initial exposure. Thus, a resist pattern having an overhang structure is formed. For example, said semi-light-shielding member 5 has a minute pattern and the like which comprise the same material as that of the light shielding member 4 and which have the resolution limit that is less than that of the resist 1 on the semiconductor substrate 2. |
