| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern for uniformly forming a resist pattern having pattern dimensions which are not more than the limit of the resolution of an exposure device. SOLUTION: This resist pattern forming method comprises a process to form resist on a substrate, a process to form an opening at the resist by photo-lithography, a process to increase the glass transfer temperature of the resist in a region isolated from the opening by more than a predetermined distance, and a process to carry out heat treatment at a temperature between the glass transfer temperature of the resist in the region isolated from the opening by not more than the predetermined distance and the glass transfer temperature of the resist in the region isolated from the opening by more than the predetermined distance. COPYRIGHT: (C)2005,JPO&NCIPI
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