发明名称 Semiconductor structure with electrode ion migration - has auxiliary ion collector on face with main electrode with other main contact on opposite face
摘要 In a device with a main electrode (4) and a rear contact (3) there is mounted at least one additional auxiliary electrode (7) spaced from the main electrode. It is fed with a voltage that is of opposite polarity to that applied to the main electrode. The auxiliary electrode (7) may be on the surface and of ring-form, or it may be on a surface layer separating it from the main electrode. It may be of comb shape and of the same material as the main electrode. ADVANTAGE - Ions from main electrode are accelerated to auxiliary electrode without affecting main field.
申请公布号 DE3905418(A1) 申请公布日期 1990.08.23
申请号 DE19893905418 申请日期 1989.02.22
申请人 TELEFUNKEN ELECTRONIC GMBH, 7100 HEILBRONN, DE 发明人 LIEBECK, URSULA, DIPL.-ING. (FH), 7100 HEILBRONN, DE
分类号 H01L29/861 主分类号 H01L29/861
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