| 摘要 |
<p>PURPOSE:To obtain a high-speed PROM by providing one line of a P base layer on each of N type beltlike collector layers on a P type Si substrate, providing an N emitter layer in the P base layer, providing an N<+> burried layer between the substrate and the collector layer, making a collector electrode between adjacent two bases, and connecting the emitter and the collector to bit and word wires respectively. CONSTITUTION:N collectors 2 are arranged in the shape of a belt respectively, an N<+> buried layer 7 is provided in continuation between a P type Si substrate 1 and the N collectors, and collector electrodes 5 are arranged with two P bases between them. The collector electrodes 5 are connected to word wires W1 and W2 while N emitters 4 are connected to bit wires B1-B5 through the intermediary of electrodes. The word and bit wires are formed of multi-layer metal wires. By this constitution, a write current of the bit wires is not branched, because of the presence of the electrodes 5 with the two bases in between, thereby a cell can be broken down effectively, the width WI of a collector layer can be reduced, and moreover, layers 3, 6, etc. are formed on the basis of self-alignment by V type insulating grooves 11 and thereby can be integrated in a high degree. In addition, a high-speed access is enabled, since the capacity of the word wires is reduced.</p> |
