发明名称 Microwave plasma processing method and apparatus.
摘要 <p>In a microwave plasma processing method and apparatus, the electromagnetic field intensity distribution of the microwaves, which is incident into a plasma generation chamber (2) and is again incident due to irregular reflection, is made uniform by means (15) fixed inside a waveguide (3). A processing gas is converted to plasma by the microwaves having uniform electromagnetic field intensity distribution, and a sample is plasma-processed. Accordingly, the electromagnetic field of the microwave, which is incident, and is again incident, into the plasma generation region and locally increases a plasma density, is absorbed, attenuated or diffused so that the distribution of the plasma density is made uniform and uniform processing can be effected.</p>
申请公布号 EP0383567(A2) 申请公布日期 1990.08.22
申请号 EP19900301559 申请日期 1990.02.14
申请人 HITACHI, LTD. 发明人 WATAMABE, SEIICHI;NAWATA, MAKOTO;FUKUYAMA, RYOOJI;KAKEHI, YUTAKA;KANAI, SABURO;UEYAMA, KEIJI
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 C23F4/00
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