| 摘要 |
PURPOSE:To maintain high integration in a semiconductor device by forming a semiconductor element, e.g., semiconductor resistance element through an insulating film on a gate electrode of an insulated gate field effect MOS transistor. CONSTITUTION:Sources or drains 2, 2' are formed in a substrate 1. An insulating film 4 which contains impurity is grown through a field insulating film containing no impurity on the substrate 1 in which the sources or drains 2, 2' are formed. A diffused layer 5 is formed in a polycrystalline silicon film 6 of a semiconductor film from above the contact part 2a of the source or drain to above a gate electrode 10. A polycrystalline silicon film 6 for forming the layer 5 together with the film 4 containing impurity is grown and formed on the layer 5. An oxidized film 7 for insulating the parts is formed on the film 6, and aluminum electrode wirings 8 are formed on the film. |
