Method and structure for preventing wet etchant penetration at the interface between a resist mask and an underlying metal layer.

摘要

A method and structure which will prevent wet etchant penetration at the interface region of a masked metal layer during etching of an exposed portion of the metal adjacent thereto is provided. The metal is provided with a matte finish of 0.003 and 0.013 mm (0.1 and 0.5 mils) peak to valley. The metal is covered with a dry film photoresist material which has been plasticized to have a surface deflection of at least 0.013 mm (0.5 mils) without losing its plasticity and conforms to the surface pattern of the metal. The photoresist is imagewise patterned and developed, and the exposed or revealed regions of the metal are subject to a wet etching process. The conformed coating of the resist prevents wet etchant penetration.