| 摘要 |
<p>PURPOSE:To reduce a distance between thin-film transistors and to realize display with high definition by separating an intrinsic a-Si layer left on gate lines at the sections between the thin-film transistors. CONSTITUTION:On a gate line 2 of a thin-film transistor T, there are deposited a gate insulating film 3 and an intrinsic a-Si semiconductor layer 4 both having identical patterns with that of the part of the gate line 2 other than a terminal section 2b thereof. Then, on the intrinsic a-Si semiconductor layer 4, there are provided a data line 7 and a source electrode 8 in an identical pattern with that of a gate electrode section 2a of the gate line 2, and through an N<+> type a-Si layer 5 which is separated at channel sections. Further, at least the intrinsic a-Si semiconductor layer 4 on the gate line is separated off at the sections between the thin-film transistors T. In this manner, the size of a picture element and hence the distance between the thin-film transistors can be reduced and display with high definition can be realized.</p> |
