Method and apparatus for forming a film.

摘要

This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film (17) of high purity and quality at high speed, a particle beam (16) such as an ion beam, an electron beam, or a plasma is applied to a sputtering target (9) comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target (9), fly in the space in the vacuum chamber (7), reach the substrate on which they are deposited to form a desired film (17). To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam (16) of about 10 eV or less is applied to the target (9) comprising an organic compound disposed in a vacuum. The particle beam (16) has energy high enough to break the van der Waals bonds between the molecules of the organic substance but not the covalent bonds between the atoms. The sputtered particles from the target (9) are deposited on the substrate (10) to form a film (17) of the organic compound.