发明名称 |
Copper alloy for an electronic device and method of preparing the same |
摘要 |
A copper alloy for an electronic device comprises 1.0 wt %-4.0 wt % of Ni, more than 0.2 wt % and less than 0.8 wt % of P, 0.5 wt %-6.0 wt % of Zn and the rest being copper and unavoidable impurities. The rest may include 0.05 wt %-1.0 wt % of Mg. A wire of the above-mentioned copper alloy is prepared by heating the copper alloy having the composition described above at temperature of 750 DEG C.-950 DEG C. for more than one minute before the final rolling operation, and then, heating the material at a temperature of 350 DEG C.-500 DEG C., or slowly cooling it at a rate of 4 DEG C./min. or less, or cooling it at a rate of 1 DEG C./min. or more until temperature reaches 500 DEG C. and keeping its temperature for at least one hour in a temperature range of 500 DEG C.-350 DEG C.
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申请公布号 |
US4950451(A) |
申请公布日期 |
1990.08.21 |
申请号 |
US19890326645 |
申请日期 |
1989.03.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAJIMA, TAKASHI;KUBOZONO, KENJI;ITOU, TAKEFUMI;HASHIZUME, KIMIO;IWASE, SHINICHI |
分类号 |
C22C9/04;C22C9/06 |
主分类号 |
C22C9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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