发明名称 |
POSITIVE PHOTORESIST COMPOSITION HAVING HIGH SENSITIVITY |
摘要 |
Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendent to the polymer backbone, a portion of which groups are substituted with acid labile groups. The attached drawing shows comparative spectral compositions of 1,4 mu m resist films of various compositions according to the present invention. |
申请公布号 |
JPH02209977(A) |
申请公布日期 |
1990.08.21 |
申请号 |
JP19890271936 |
申请日期 |
1989.10.20 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
DEIBITSUDO POORU MERITSUTO;UEIN MAATEIN MOOROU;ROBAATO RABIN UTSUDO |
分类号 |
C09D11/10;C08F8/14;G03F7/039;H01L21/027 |
主分类号 |
C09D11/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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