发明名称 POSITIVE PHOTORESIST COMPOSITION HAVING HIGH SENSITIVITY
摘要 Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendent to the polymer backbone, a portion of which groups are substituted with acid labile groups. The attached drawing shows comparative spectral compositions of 1,4 mu m resist films of various compositions according to the present invention.
申请公布号 JPH02209977(A) 申请公布日期 1990.08.21
申请号 JP19890271936 申请日期 1989.10.20
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 DEIBITSUDO POORU MERITSUTO;UEIN MAATEIN MOOROU;ROBAATO RABIN UTSUDO
分类号 C09D11/10;C08F8/14;G03F7/039;H01L21/027 主分类号 C09D11/10
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