| 摘要 |
A memory device having a plurality of addressable memory locations, each of which can be defined uniquely by an address having an X component and a Y component. The locations correspond respectively to grid points in a rectangular array at a pitch dX in the X direction and a pitch dY in the Y direction is loaded with data values at locations corresponding to grid points lying substantially on a line from a location (X0+e*dX, Y0+f*dY) to a location (X0+p*dX, Y0+q*dY), where X0, Y0) is a grid point and e, f, p, and q are integers. The memory device is loaded by a method which includes (a) setting s=floor (p/q) -PInc = p - sq -q -NInc = p -sq -AErr0 = PInc - (b) for each value of i in the range from 0 to q-1, executing -If AErri >= 0 -then Xi+i: = Xi + (s + 1)dX -AErri+1: = AErri + PInc -else Xi+1: = Xi + sdX -AErri+l: = AErr1 + NInc -end If -Yi+1: = Yi + dY - and (c) loading the memory locations (Xi+1+u*dX, Yi+1), where u is an integer, for each value of i in the range from 0 to q-1.
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