| 摘要 |
A radiation mask for the lithographic production of patterns, particularly for the X-ray lithographic or ionic lithographic production of semiconductor modules and semiconductor components and of optical grids. The radiation mask includes a carrier layer mounted in a support frame. The carrier layer has a structure corresponding to the pattern to be created. The carrier layer has in its border portion between the structure and the support frame an elastic portion. This elastic portion serves to ensure dimensional accuracy of the structure when stresses occur. The elastic portion may be formed by perforations defined in the carrier layer circumferentially surrounding the structure.
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