| 摘要 |
<p>PURPOSE:To prevent effect of external noise, and to prevent heat concentration by self-heat generation of a semiconductor device so as to enable airtightness to be maintained by forming a metallic overcoat film through an insulating film on the part where a circuit is formed. CONSTITUTION:After wiring finish of each region of the gate, the source, and the drain of metallic films 3 and 6, an overcoat film of insulating substance is formed, and a metallic overcoat film is formed thereon. Though the metallic overcoat film of a metallic interlayer film 8 is formed at the part excluding the region of input/output terminals, it is brought into contact with one of input/output pads 9, and by short-circulating the pad with the standard power source or applying voltage at the same potential as the standard power source from the outside, the shield effect can be applied to the whole semiconductor device, and the effect from the external noise can be prevented. Moreover, since the metal is higher in heat conductivity than silicon, by forming a metallic film, the heat generated by the action of a transistor can be diffused through the metallic overcoat film by forming a metallic film, whereby one-point concentration of heat generation can be prevented.</p> |
