| 摘要 |
PURPOSE:To form more elements in a chip of the same area by connecting in cascade main electrode regions of adjacent P-type, N-type MOS transistors with a common diffused layer, and forming the gate electrodes of outer N-type MOS transistor commonly with adjacent gate electrode. CONSTITUTION:P-type MOS transistors TP1-TP4 are adjacently disposed so that gate electrodes 31-34 are opposed in parallel. The gate electrode 35-38 of N-type MOS transistors TN1-TN4 are opposed in parallel. The electrodes 35, 38 of both outer transistors TN1 and TN4 are common with the gate electrodes of outermost N-type MOS transistors of adjacent basic cells. Thus, the transistors TP1-TP4 are composed at adjacent main electrode regions of common diffused layers 39, 41-44, and the transistors TN1-TN4 are also composed at adjacent main electrode regions of common diffused layers 40, 45, 46. Further, the gate electrodes 35, 38 of the outermost transistors TN1-TN4 are formed commonly with the gate electrode of the outermost N-type MOS transistor of adjacent basic cells. |
