发明名称 Integrated circuit device
摘要 An integrated circuit device includes insulated-gate field effect transistors employing a semiconductor gate electrode used as a logic element. Part of the input interconnection layer serves as the semiconductor gate electrode and orthogonally intersects with a conductive layer. The logic circuits are interconnected to constitute a random gate logic circuit that can be operated at high speeds and formed with a high density.
申请公布号 US4951111(A) 申请公布日期 1990.08.21
申请号 US19850689491 申请日期 1985.01.03
申请人 NIPPON ELECTRIC CO., LTD. 发明人 YAMAMOTO, HIROHIKO
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/088;H01L27/112;H01L29/78;H03K19/0944 主分类号 H01L21/822
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