发明名称 |
Integrated circuit device |
摘要 |
An integrated circuit device includes insulated-gate field effect transistors employing a semiconductor gate electrode used as a logic element. Part of the input interconnection layer serves as the semiconductor gate electrode and orthogonally intersects with a conductive layer. The logic circuits are interconnected to constitute a random gate logic circuit that can be operated at high speeds and formed with a high density.
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申请公布号 |
US4951111(A) |
申请公布日期 |
1990.08.21 |
申请号 |
US19850689491 |
申请日期 |
1985.01.03 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
YAMAMOTO, HIROHIKO |
分类号 |
H01L21/822;H01L21/82;H01L27/04;H01L27/088;H01L27/112;H01L29/78;H03K19/0944 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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