| 摘要 |
A carrier for high power solid state devices in particular monolithic microwave integrated gallium arsenide circuits includes a dielectric carrier surface comprised of aluminum nitride having disposed over a first surface thereof, a plated ground plane conductor and having disposed over a second surface thereof a ground plane conductor disposed in selected regions of said second surface, connected to the underlying ground plane conductor by via holes. The aluminum nitride carrier provides a dielectric for transmission lines which are supported by said carrier, and a support for resistor and capacitor devices formed over said carrier by thin film techniques. A high power active device such as a FET or gallium arsenide MMIC is bonded to the selective ground plane regions of the second surface of the aluminum nitride carrier. With this approach, a separate metal carrier having separately mounted components such as resistors, capacitors, and transmission lines is eliminated. The techniqu provides improvement in thermal resistance characteristics of the microwave circuit supported by the carrier and simplifies the packaging of such devices.
|
