| 摘要 |
PURPOSE:To obtain a light emitting element structure which emits a laser beam efficiently and stably without an optical system by a method wherein a first clad layer, an active layer, and a second clad layer are provided to a semiconductor single crystal layer, and a stripe-like wavelength conversion section is provided close to the active layers. CONSTITUTION:An n-type clad layer 2 and an active layer 3 are laminated on an n-type substrate wafer 1, furthermore a p-type clad layer 4 is deposited thereon, and the face of the wafer 1 vertical to the layers is cleaved to form a light emitting structure of this design. When a forward current is made to flow between a p-side electrode 6 and an n-side electrode 5 of the semiconductor laser, the active layer 3 emits light rays of LED type wavelength spectrum. The light rays are mirror-reflected by opposed cleavage planes 9 to grow to be an LD-type wavelength spectrum intense only in resonance frequency. Here, to make the spectrum grow to be a super-luminescent type spectrum, the gap between an Nd doped region 7 and the layer 3 is made to have a length of the order of the emission wavelength, and the cleavage plane 9 is subjected to an AR coating treatment. By this setup, a stripe-like wavelength conversion layer 7 doped with trivalent rare earth ions is excited by light rays emitted from the active layer which have a required intensity in a specified wavelength region to obtain a laser output excellent in thermal stability. |
