发明名称 THE TRANSMISSION GATE CIRCUITRY
摘要 Each IGFET of a complementary transmission gate has associated with it a corresponding dummy device of like conductivity type. Each dummy device is operated in a complementary manner to its corresponding transmission gate IGFET to provide cancellation of gating signals that may tend to be coupled via a parasitic capacitance to the conduction paths of the IGFET. The gate electrodes on Ng1 and CPG1 are connected in common to a line and are driven by a clock signal Cl, applied to the line. The gate electrodes of PG1 and CNG1 are connected in common to a second line and are driven by a second clock signal. The signals are complementary to each other.
申请公布号 KR900006063(B1) 申请公布日期 1990.08.20
申请号 KR19860000946 申请日期 1986.02.12
申请人 R.C.A. CORP. 发明人 DINGWELL ANDREW G.F.;JATCHU VICTOR
分类号 H03K17/687;H03K17/16;(IPC1-7):H03K17/687 主分类号 H03K17/687
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