发明名称 |
THE TRANSMISSION GATE CIRCUITRY |
摘要 |
Each IGFET of a complementary transmission gate has associated with it a corresponding dummy device of like conductivity type. Each dummy device is operated in a complementary manner to its corresponding transmission gate IGFET to provide cancellation of gating signals that may tend to be coupled via a parasitic capacitance to the conduction paths of the IGFET. The gate electrodes on Ng1 and CPG1 are connected in common to a line and are driven by a clock signal Cl, applied to the line. The gate electrodes of PG1 and CNG1 are connected in common to a second line and are driven by a second clock signal. The signals are complementary to each other.
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申请公布号 |
KR900006063(B1) |
申请公布日期 |
1990.08.20 |
申请号 |
KR19860000946 |
申请日期 |
1986.02.12 |
申请人 |
R.C.A. CORP. |
发明人 |
DINGWELL ANDREW G.F.;JATCHU VICTOR |
分类号 |
H03K17/687;H03K17/16;(IPC1-7):H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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