| 摘要 |
PURPOSE:To prevent the softening of PSG, the n-inversion of a p-layer, and the corrosion of a source electrode by a method wherein, in a semiconductor device having insulator on the side wall of a insulating gate, insulator is deposited before a process for forming a source layer. CONSTITUTION:In a semiconductor device wherein PSG 24 is formed on the side wall of a gate 31, an SiO2 film 51 is deposited from above by using, e.g. CVD method of low reaction temperature; by heat treatment, phosphorus in the PSG 24 is diffused into a p-layer 13, and an n<+> layer 15 is formed; by anisotropic dry etching, the deposited SiO2 film 51 is wholly eliminated; by depositing a source electrode 42 from above, the n<+> layer 15 and the p-layer 13 are shorted. In this manner, the PSG 24 arranged on the side wall of a gate is covered with the SiO2 51, so that the shape change due to softening caused by heat treatment can be prevented. As the result, the short between a gate electrode 31 and a source electrode 42 can be prevented. Further, the SiO2 51 acts as a stopper for scattering of phosphorus at the time of heat treatment, and n-inversion of the p-layer 13 can be prevented. |
