| 摘要 |
PURPOSE:To flatten the surface of a bump, increase the contact area with a lead, and improve the bonding strength by a method wherein an insulating film on a first conductor layer turning to a bump stand is patterned, thereby leaving it in the form of a lattice, and a second conductor layer is buried in each aperture surrounded by the lattice type insulating film. CONSTITUTION:In a bump forming region 2 of a semiconductor wafer 1, a first conductor layer 3 turning to a lase stand for a bump is formed; an insulating film 4 is formed; a silicon nitride film is formed thereon; the insulating film 4 is coated with a resin film 6 like polyimide, and the surface is flattened; the insulating film 4 and the silicon nitride film 5 on the first conductor layer 3 are patterned, thereby leaving them in the form of a lattice; the size of an aperture 7 surrounded by the lattice is about 5mumsquare; a second conductor layer 8 such as tungsten and molybdenum is selectively buried in the aperture 7. As the result, the surface of the layer formed by the lattice type insulating film on the first conductor layer and the second buried conductor layer 8 becomes flat, and the surface of a bump 11 formed thereon also becomes flat, so that the contact area with a lead is increased and the bonding strength is improved. |
