Process and apparatus for recrystallization of semiconductor layer.

摘要

The process comprises the steps of forming a polycrystalline or amorphous semiconductor layer on a substrate and scanning energy beam on the semiconductor layer. The energy beam (7) is vibrated substantially in parallel to the direction of advance of the scanning of the energy beam. For carrying out the process, the apparatus comprises a sample stage (5) for holding a sample (6) having a polycrystalline or amorphous semiconductor layer, an energy beam source (1) for generating energy beam (7) a scanning means (3) for scanning the energy beam on the semiconductor layer, and a beam-vibrating means (2) for vibrating the energy beam substantially in parallel to the direction of advance of the scanning of the energy beam.