| 摘要 |
An apparatus for producing a semiconductor single crystal which comprises a crucible, a heater, a means of operating the crucible, a chamber in which the crucible and heater are housed, and a hydrogen mixture gas feeder with which a hydrogen mixture gas obtained by mixing a hydrogen-containing gas containing hydrogen atoms with an inert gas is supplied to the chamber, wherein the hydrogen mixture gas feeder comprises a hydrogen-containing-gas feeder, an inert-gas feeder, a hydrogen-containing-gas flow regulator, an inert-gas flow regulator, and a buffer tank in which the hydrogen-containing gas and the inert gas are mixed to produce a hydrogen mixture gas and the mixture gas is stored.
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