| 摘要 |
<p>A method for manufacturing a transistor in a semiconductor device is provided to reduce a leakage current in an edge region of a gate electrode by forming a gate oxide layer corresponding to a center region of the gate electrode thicker than a gate oxide layer corresponding to the edge region of the gate electrode. A first oxide layer is formed on a substrate(1). A one part of the entire region of the first oxide layer is patterned thinner than the other part. A second oxide layer and a conductive layer are formed on the patterned first oxide layer. The conductive layer, the second oxide layer, and the first oxide layer are patterned to form a gate electrode, a first gate oxide layer(5b), and a second gate oxide layer corresponding to a center region of the part of the first oxide layer. After forming the gate electrode, the first gate oxide layer, and the second gate oxide layer, an LDD(Lightly Doped Drain) region is formed by performing an ion implantation process. A spacer is formed on a sidewall of the gate electrode. A source/drain region is formed on the resultant structure by the ion implantation process.</p> |
