| 摘要 |
PURPOSE:To mount an ECL memory free from data inversion defects without increasing the number of processes compared to the number of processes of the conventional manufacture of a bipolar LSI by a method wherein P-type diffused layers are formed in a region where an element is to be isolated and a region where at least one emitter among a plurality of emitters is to be formed on a silicon substrate simultaneously. CONSTITUTION:An N-type buried collector layer 2 is formed in a silicon substrate 1. Then a P-type buried layer 3 is formed in an isolation region. Then an N-type epitaxial layer 4 is formed. Then P-type impurity is selectively diffused to form a P-type isolation region 5, the first base region 6 of a read/write transistor and the emitter region 7 of a lateral P-N-P transistor which is to be a load. Then P-type impurity is selectively diffused to form a second base region 8 and N-type impurity is selectively diffused to form emitter regions 9a and 9b. |
