发明名称 |
SEMICONDUCTOR DEVICE OF OVERVOLTAGE SELF-PROTECTION TYPE |
摘要 |
<p>Disclosed is a semiconductor device of overvoltage self-protection type which is safely turned on in response to application of an overvoltage exceeding a breakdown voltage. When, after formation of a predetermined pn junction in a semiconductor substrate, an etched region is formed in a cathode-side base layer from the side of a cathode emitter layer, the breakdown voltage is variable depending on not only the depth but also the diameter of the etched region. Noting the above fact, a circular overvoltage self-protection region having a depth d and a diameter D is provided together with a slot-like turn-on current limiting region having the same depth d but a width smaller than the diameter D of the circular region. The turn-on current limiting region is disposed between the overvoltage self-prevention region and the cathode emitter layer.</p> |
申请公布号 |
CA1272811(A) |
申请公布日期 |
1990.08.14 |
申请号 |
CA19860507271 |
申请日期 |
1986.04.22 |
申请人 |
HITACHI, LTD. |
发明人 |
SHIMIZU, YOSHITERU;KONISHI, NOBUTAKE;YOKOTA, TAKESHI;YOKOTA, YOSHIHIRO;YATSUO, TSUTOMU |
分类号 |
H01L29/74;H01L31/111;(IPC1-7):H01L29/74;H01L31/10 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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