| 摘要 |
PURPOSE:To realize low standby currents and stabilized ER-type static RAM cell by providing the sidewall of polycrystalline or single crystalline silicon, through an insulating film with a gate electrode, on one side of the side faces of the gate electrode, and using this sidewall as a resistance element controlled by the gate electrode. CONSTITUTION:The sidewall 17 of polysilicon is provided, through an insulating film 16 with a gate electrode, only on one side of the side faces of the gate electrode 15, and this sidewall 17 is used as a variable resistance element controlled by the gate electrode 15. This way, while restraining standby currents Isb low, and besides without increasing the cell area, the static RAM cell, which improves cell properties, can be realized. |
