发明名称 Static random access memory having a flash clear function
摘要 The invention provides a static random access memory wherein the peak value of current flow therethrough upon flash-clearing is minimized. The static random access memory comprises a memory cell array which is divided into a plurality of memory cell groups which are driven at mutually different timings for flash-clearing by means of a plurality of delay circuits connected in cascade to which the flash-clearing signal is applied.
申请公布号 US4949308(A) 申请公布日期 1990.08.14
申请号 US19880271619 申请日期 1988.11.15
申请人 SONY CORPORATION 发明人 ARAKI, SHIGEO;TANIGUCHI, HITOSHI;SUZUKI, HIROYUKI;KOMATSU, TAKAAKI
分类号 G11C11/41;G11C7/20;G11C11/419 主分类号 G11C11/41
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