发明名称 |
Static random access memory having a flash clear function |
摘要 |
The invention provides a static random access memory wherein the peak value of current flow therethrough upon flash-clearing is minimized. The static random access memory comprises a memory cell array which is divided into a plurality of memory cell groups which are driven at mutually different timings for flash-clearing by means of a plurality of delay circuits connected in cascade to which the flash-clearing signal is applied.
|
申请公布号 |
US4949308(A) |
申请公布日期 |
1990.08.14 |
申请号 |
US19880271619 |
申请日期 |
1988.11.15 |
申请人 |
SONY CORPORATION |
发明人 |
ARAKI, SHIGEO;TANIGUCHI, HITOSHI;SUZUKI, HIROYUKI;KOMATSU, TAKAAKI |
分类号 |
G11C11/41;G11C7/20;G11C11/419 |
主分类号 |
G11C11/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|