发明名称 Resistor composition, resistor produced therefrom, and method of producing resistor
摘要 A resistor composition containing no boride powder is obtained by mechanical grinding of at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide, which are capable of being reduced with silicon, silicon monoxide or higher oxidation state precursor of silicon monoxide. In a sintering step in a non-oxidizing atmosphere, boron oxide and at least one another oxide contained in the borosilicate glass are reduced by silicon, silicon monoxide, higher oxidation state precursor of silicon monoxide or silicide, and metal elements of the oxides contained in the glass combine with each other, so that fine particles of boride are precipitated around glass particles to form a graze resistor.
申请公布号 US4949065(A) 申请公布日期 1990.08.14
申请号 US19880247064 申请日期 1988.09.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 WATANABE, HIROTOSHI;ISHIDA, TORU
分类号 H01C7/00;H01C17/065 主分类号 H01C7/00
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