| 摘要 |
Aq. developer soln. for positive working photoresist compsns. contains (a) water as solvent, (b) a water-soluble organic basic cpd. (I), dissolved in the solvent, and (c) a polyoxyethylene (POE) alkylphenyl ether of formula (I) or an opt. alkyl-substd. POE naphthyl ether of formula (II) as nonionic surfactant, dissolved in the solvent in a concn. of 50-5000 ppm by wt. In the formulae R1 = C5-15 alkyl; R2 = H or C1-15 alkyl; R3 and R4 are each H or C1-15 alkyl; n and m = 5-60. The soln. can develop photoresists (based on an alkali-solube novolak resin and a naphthoquinone diazide) without leaving residues or causing frothing, even in areas of very fine structure (line width 1 micron or less), and ensures much better resolution than usual with reproduction of extremely fine contact windows.
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