| 摘要 |
PURPOSE:To form a gate electrode and N<+> region of source and drain by subjecting ion implantation making use of the self-alignment process as well as to reduce the gate resistance by a method of manufacturing the GaAs MESFET. CONSTITUTION:The first metallic film 41 contaiing a metal such as Nb, Ta, Mo, W and the like or the alloys thereof or the other alloys containing 20atm% or less of metal such as Ti, Cr, Zr and the like in addition to the said metals and alloys is formed on an N type channel layer 12 formed on a high resistant GaAs substrate 11 and the second metallic film 42 is formed on the said film 41 into the size larger than that of the film 41 and the ion 43 of the donor impurities is implanted in the source and drain regions 44 and 45. Then the surface is coated with a protecting film 46 for annealing to activate the implanted ion forming the N<+> regions 13 and 14. The surface protecting film is further removed to form the source and drain electrode 16 and 17. |
