发明名称 |
HANDOTAISOCHINOSEIZOHOHO |
摘要 |
The semiconductor device, such as a bipolar transistor, is formed in superposed layers doped with various types and concentrations of doping impurities. Said layers forming a thin monocrystalline semiconductor film (11) are supported on the surface of a substrate and contacted electrically with a conductive network on top of thin film (11). Two or several of such devices can be stacked one upon the other and interconnected electrically. …<??>Thin film (11) is produced preferably from a non-monocrystalline semiconductor film having the defined dopant distribution and a tapered region (14) terminating in a point (15). Starting at point (15) the thin film (11) is traversed with a particle beam causing the growth of a monocrystalline thin film (11). …<??>The device and method are useful in the VLSI-technology. |
申请公布号 |
JPH0235468(B2) |
申请公布日期 |
1990.08.10 |
申请号 |
JP19810137892 |
申请日期 |
1981.09.03 |
申请人 |
INTAANASHONARU BIJINESU MASHIINZU CORP |
发明人 |
SUCHIIBUN JOOJI BAABII;JEEMUZU MAAKU RIISU;JEEMUZU ROBAATO ROIDO;ARUNACHARA NAGARAJAN |
分类号 |
H01L29/73;H01L21/02;H01L21/20;H01L21/28;H01L21/3205;H01L21/331;H01L21/74;H01L21/76;H01L21/768;H01L21/822;H01L23/52;H01L27/00;H01L27/12;H01L29/04 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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