| 摘要 |
PURPOSE:To minimize the loss due to the restrictions on the structural design by a method wherein the variable multiple junction structure provided with the two kinds of forbidden band width (or optical transition interval) of the first and second layer forming the npn structure is adopted. CONSTITUTION:The photogenerating element is comprised of nipin substrate. The band width of the i type semiconductor layer 3b formed on the p type semiconductor layer 4 is narrower than that of the true semiconductor layer 3. The n<+> semiconductive layer 2b is formed on the layer 3b. Therefore it is needless to add the photocurrent generated in the layer 1 to that generated in the layer 2. Through these procedures, the option and the allowance in the design are increased so that the optimum composition in terms of the physical constant of the layer 1 and 2 may be selected. |
