| 摘要 |
PURPOSE:To make up a reflecting mirror which is sufficient in strength and is free from electrical, optical absorption and maintain high light emission efficiency as well by making a single crystal grow on a dielectric substance and performing an epitaxial growth of a double hetero-structure. CONSTITUTION:Using a difference in a nucleation density between a nucleation face 7 and a non-nucleation face 8, III-V compound semiconductor crystals 9, such as GaAs, InP and like are formed through a selective nucleation process as shown in figure with epitaxial growths, such as MOCVD, LPE, MOMBE and the like. In the foregoing nucleation process, substrates 7 which are fine and have the nucleation density that is higher than that of the non-nucleation face are provided on the non-nucleation face 8 and its process makes each single crystal 9 grow to form a light emission element. A reflecting mirror which lessens light absorption and electrical losses is made up and a light emission device which is superior in strength is thus obtained. |
