| 摘要 |
A method for removing a material from a trench in a semiconductor. The method includes placing the semiconductor in a vacuum chamber, admitting a reactant into the chamber at a pressure to form a film of the reactant on a surface of the material, controlling the composition and residence time of the film on the surface of the material to etch at least a portion of the material, and removing any unwanted reactant and reaction product from the chamber or the surface of the material.
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