| 摘要 |
PURPOSE:To form an ultrafine multilayer wiring structure without necessity of high temperature heat treatment and without limiting with phosphorus glass in an interlayer insulating film by setting the interval of the first conductive film to the distance less than twice of the thickness of the second insulatng film. CONSTITUTION:The first metal wirings 23, 23' are formed on a thermally oxidized film 22 covered on a semiconductor substrate 21 and having holes, an interlayer insulating film 24 of a nitrided film is formed by a plasma chemical reaction over the wirings, and the second layer meral wiring 25 electrically connected to the wiring 23' and extending on the film 24 through the hole is formed. The interval of the wirings 23, 23' is formed by approaching to less than the twice of the thickness of the interlayer insulating film. When the second metal wiring layer is formed, it is not necessary to consider the disconnection, the stepped parts of the respective layers can be flattened by the interlayer insulating film formed directly thereon at every time, thereby being effective for the multilayer wirings. |
