| 摘要 |
PURPOSE:To prevent an erroneous operation due to flow of a current generated at a position under an element upon passage of alpha-particles, to the bottom of the element by burying an insulator between channels and under the element. CONSTITUTION:A low resistance material 11 of single crystal is formed on an SiO2 film 3 by the lateral solid epitaxial growth of the low resistance material 11, patterned by using an etching technique, and an insulator film 3 is formed thereon by a depositing method. A hole is opened in a predetermined position such as an element forming region, and the contact of the low resistance material with Si is eventually formed by the Si solid epitaxial growth and the injection of an impurity. Thus, the contact of a high impurity concentration region 15 with metal wirings 14 can be formed near a channel region 13, and a parasitic resistance in the high impurity concentration region 15 can be reduced as much as possible. An insulation between elements is effectively provided to shorten an interval between the elements, the integration of an LSI can be raised, and the reliability of the LSI can be enhanced. |
