发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PURPOSE:To execute a vapor growth operation while a specimen is being evaluated without destroying the specimen by installing the following: an X-ray generation apparatus which radiates X-rays in order to test the inside of a reaction tube; an X-ray detector which measures an intensity of diffracted X-rays from the surface of the specimen. CONSTITUTION:A specimen 1 is placed on a specimen stage 2; they are set inside a reaction tube 7 and are heated by means of a high-frequency heating heater 3. A gas which has been supplied from a gas supply mechanism 4 is guided to the reaction tube 7 and is evacuated from an evacuation system 5; thereby, a substance is formed by vapor growth on the specimen 1. A high-output X-ray generation apparatus 8 is installed on one side of the reaction tube 7; an X-ray detector 11 is installed on the other side; X-rays from the high-output X-ray generation apparatus 8 are taken out and are made incident on the specimen 1 inside the reaction tube 7. During this process, the X-rays are incident at an angle close to the specimen 1; diffracted X-rays 10 from the surface of the specimen are measured with the X-ray detector 11. During this process, the X-rays are reflected totally, and totally reflected X-rays 9 are generated. A rotary mechanism 6 is driven by means of a goniometer; the specimen 1 is turned; an incident direction of the X-rays is changed; the specimen is evaluated by using the X-rays in many directions. Thereby, the specimen can be observed on the spot.
申请公布号 JPH02199821(A) 申请公布日期 1990.08.08
申请号 JP19890019126 申请日期 1989.01.27
申请人 NEC CORP 发明人 AKIMOTO KOICHI
分类号 H01L21/205;H01L21/027;H01L21/31 主分类号 H01L21/205
代理机构 代理人
主权项
地址